Extreme ultraviolet (EUV), 13.5 nm, lithography techniques have attracted a great deal of attention because of the mass production of 50 nm critical dimensions as the future generation lithography. One of key issues to be clarified for the development of a 13.5 nm EUV light source is to improve the conversion efficiency (CE). In this paper, hollow multilayer nanofibers were fabricated through the combination of a layer-by-layer (LBL) technique with the electrospinning technique. The obtained hollow fibers were employed as EUV targets. In order to improve the CE, the irradiated laser energy was increased from 10(10) to 10(11) W/cm(2) and the CE was correspondingly increased from 0.43 to 0.83%.