One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composition ratios were prepared by electrospinning. The surface morphology, crystallinity, grain size distribution, and chemical composition of the nanofibers were investigated. Meanwhile, field-effect transistors (FETs) based on ZnSnO nanofiber networks (NFNs) with various composition ratios were integrated and investigated. For optimized Zn0.3Sn0.7O NFNs FETs, the device based on an SiO2 dielectric exhibited a high electrical performance, including a high on/off current ratio (I-on/off) of 2 x 10(7) and a field-effect mobility ((FE)) of 0.17 cm(2) V-1 s(-1). When a high-permittivity () ZrOx thin film was employed as the dielectric in Zn0.3Sn0.7O NFNs FETs, the operating voltage was substantially reduced and a high (FE) of 7.8 cm(2) V-1 s(-1) was achieved. These results indicate that the Zn0.3Sn0.7O NFNs/ZrOx FETs exhibit great potency in low-cost and low-voltage devices.