We constructed complementary inverters utilizing solution-processed semiconducting single-walled carbon nanotube (scSWCNT) random networks and electrospun In-Ga-Zn-O (IGZO) nanofibers as p-type and n-type thin-film transistor (TFT) channels, respectively. The IGZO nanofiber n-type TFT and scSWCNT random network p-type TFTs show an on-off current ratio of 2.82 x 10(5) and 1.38 x 10(5), a threshold voltage of -7.60 and 9.50 V, a subthreshold swing of 380.13 and 391.01 mV/dec, and field effect mobilities of 1.96 and 5.67 cm(2)/V s for electrons and holes, respectively. In addition, these hybrid-type inverters consisting of n-channel TFTs and p-channel TFTs exhibit excellent complementary metal-oxide-semiconductor (CMOS) operation. Therefore, we expect that the hybrid CMOS-type inverters based on scSWCNT random networks and IGZO nanofibers can be innovative electronic devices for transparent and flexible digital logic circuits. Published by AIP Publishing.